They have applications when emergency shutdown required. PNP transistors are applied as switches, i.e., analog switches, emergency push button etc.Temperature sensitivity and may get damaged during a thermal runaway.Not suitable to operate on high-frequency application.Produce less noise than NPN Transistors.Low supply voltage requirement and less output impedance.Comparatively cheap, long-lasting and simpler circuit.Small in size and could be utilized as a part of IC design.Here the emitter current (I E) flows from the input side, and it flows in two directions one is I B and other is I C.īut only 2 to 5 % of the total current flows in the I B, so I B is negligible. The Emitter’s voltage is V EB as input side. That to restricts the current to pass through the transistor’s maximum possible height. The resistors R L and R B are connected in the circuit. So, it’s necessary to provide a voltage supply in reverse bias > 0.72 Volt. When V B the base voltage isn’t -ve in comparison to the V E the emitter voltage, the current can’t pass within the circuit. Even the little quantity of base present controls the circulation of a massive number of current through the emitter to collector supplied the Base voltage is more -ve compared to Emitter voltage. When a PNP transistor is linked with voltage resources, the base current will be carried in the transistor. PNP Transistor Circuit PNP Transistor Circuit So I C, the Collector current will pass through the Collector-Base layers because of holes.
The current will pass through the E-B junction. Therefore, almost all Emitter regions’ holes will pass the depletion region and carried into the Base regions. Simultaneously, not many electrons carried in an emitter in the base and recombined with the holes.īut the amount of electrons at the base is minimal since it’s a reasonably less doped and narrow area.
Therefore, more hole moves from emitters across the depletion area and acts as an input to the base. Even though the C-B junction is in reverse bias, the depletion area at the Collector-Base junction is wide enough.
Consequently, the Collector-Base intersection is associated with reverse biasing.Īs a result of this biasing, the depletion area at the E-B junction is less since it’s linked to forwarding bias. Along with also the +ve terminal of a voltage supply (V CB) is connected with all the Base terminal (N-type), and the -ve terminal is linked with all the Collector terminal (P-type). The Emitter-Base intersection is linked to forwarding bias. Blank, PNP Transistor, CC BY-SA 4.0 PNP Transistor Working Principle
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